Place of Origin: | China |
Brand Name: | Upperbond |
Certification: | CE, ISO |
Model Number: | Maker |
Minimum Order Quantity: | 2 pcs |
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Price: | Negotiable |
Packaging Details: | Carton |
Delivery Time: | 5-8 days |
Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
Supply Ability: | 10000 pcs/month |
Machine Applicable: | Cigarette Maker | Color: | Grey / Silver |
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Port Of Shipment: | Guangzhou, Shanghai | Machine Models: | Protos, Passim, MK8, MK9, |
Cigarette Diameter: | 5.4mm - 8.0mm | Condition: | Brand New |
High Light: | Cigarette Maker Irfz44ns,Passim Cigarette Machine Irfz44ns,Passim Cigarette Machine Components |
Electric D2PAK Mosfet Irfz44ns Passim Cigarette Machine Spare Parts
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
Voltage Drop
The image represents a typical bipolar transistor in a circuit. A charge will flow between emitter and collector terminals depending on the current in the base. Because internally the base and emitter connections behave like a semiconductor diode, a voltage drop develops between base and emitter while the base current exists. The amount of this voltage depends on the material the transistor is made from and is referred to as VBE.
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET), also known as the MOS transistor, was invented by Mohamed Atalla and Dawon Kahng in 1959. The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. With its high scalability, and much lower power consumption and higher density than bipolar junction transistors, the MOSFET made it possible to build high-density integrated circuits,allowing the integration of more than 10,000 transistors in a single IC.
High-Frequency Transistor
The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz. These were made by etching depressions into an n-type germanium base from both sides with jets of Indium(III) sulfate until it was a few ten-thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter.
Contact Person: Kiana
Tel: +8613824425740
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